SIGC223T120R2CS igbt equivalent, igbt.
* 1200V NPT technology 175µm chip
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
* integrated g.
* drives, SMPS, resonant applications
C
G
E
Chip Type
VCE
ICn
Die Size 14.4 x 15.5 mm2
Package sawn on foil.
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
tbd
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53.
Image gallery
TAGS